Previously, you will hear the word RAM (Ramdom Access Memory) is the computer’s memory.Memory RAM with various types of memory, ranging from the Edo period, DDR1, DDR2, and other types.
But the results are not yet out, sufficient to meet human needs for speed requirements of memory. Thus, the German physicists and engineers have developed a new type of memory.
Magnetoresistive random access memory is due to memory (MRAM) the name, this is not only faster memory than the memory, and more saving. MRAM could increase the presence of the polar magnetic field reverses the direction of mobile computing and storage levels of development.
IBM Corporation and several other developers plan to use the MRAM, which will play electronic magnetic MRAM change. This is also known as the spin-torque MRAM (spin torque MRAM) technology is currently being developed by the German physicist and engineer’s.
Through the establishment of a small column of 165 nm in size, will result in the magnetosphere variable will result in current flow from the bottom up, will play an electronic position. The magnetic field will change, just take a little time to change the magnetic field. Then north and south poles switch.
If you do not know the process, should not neglect or anything. Or, if you want to read the English version here myself.
To be sure, MRAM up to 10 times the speed of the memory speed. At that rate can continue in the future.
