Computer speed has been coveted by anyone. The research work and to continue efforts to improve computer skills. Some time ago, the world’s fastest supercomputer has been submitted to the U.S. military to assist in implementation of the calculation. Now look at a computer storage technologies.
Previously, you will hear the word RAM (Ramdom Access Memory) is the computer’s memory. Memory RAM with various types of memory, ranging from the Edo period, DDR1, DDR2, and other types.
But in the real rate of RAM is not yet able to meet the requirements of human needs. Thus, the German physicists and engineers have developed a new type of memory.
Magnetoresistive random access memory is due to memory (MRAM) the name of the memory not only faster than the RAM, and more energy efficient. MRAM could increase the presence of the polar magnetic field reverses the direction of mobile computing and storage levels of development.
IBM Corporation and several other developers plan to use the MRAM, which will play electronic magnetic MRAM change. This is also known as the spin-torque MRAM (spin torque MRAM) technology is currently being developed by the German physicist and engineer’s.
Through the establishment of small column of 165 nm in size, will result in top-level variables will lead to magnetic current flows from the bottom up, will play electronic position. The magnetic field will change, just take a little time to change the magnetic field. Then north and south poles switch.
If you do not know the process, should not neglect or anything. Or, if you want to read the English version here myself.
To be sure, MRAM up to 10 times the speed of the memory speed. At that rate can continue in the future.
